High performance integrated inductor

ABSTRACT

Some embodiments of the present invention include providing high performance integrated inductors.

The present patent application is a Divisional of application Ser. No.11/137,974, filed May 5, 2005.

TECHNICAL FIELD

Embodiments of the invention relate to semiconductor packaging. Inparticular, embodiments of the invention relate to methods and apparatusfor high performance and small form factor integrated inductorfabrication.

BACKGROUND

In semiconductor packaging, an integrated circuit (IC) may be placed ona package. Discrete inductors may be placed next to the die on thepackage and electrically connected to the IC. Inductors may providevarious functions, such as, for example, energy storage, selectivefiltering, and noise reduction. In general, the performance of aninductor may improve with increased inductance (L), increased Q factor(inductor reactance over resistance), and reduced resistance (R).

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is illustrated by way of example and not by way oflimitation in the figures of the accompanying drawings, in which thelike references indicate similar elements and in which:

FIG. 1 illustrates a three dimensional type view of an apparatus inaccordance with one embodiment of the present invention.

FIG. 2 illustrates a top down type view of an apparatus in accordancewith one embodiment of the present invention.

FIGS. 3-28, 3A-28A, and 14B-17B, 21B-28B illustrate top down type viewsand cross sectional type views of various methods in accordance withembodiments of the present invention.

FIG. 29 illustrates a schematic of a system in accordance with oneembodiment of the present invention.

DETAILED DESCRIPTION

In various embodiments, an apparatus and method relating to integratedinductors are described. However, various embodiments may be practicedwithout one or more of the specific details, or with other methods,materials, or components. In other instances, well-known structures,materials, or operations are not shown or described in detail to avoidobscuring aspects of various embodiments of the invention. Similarly,for purposes of explanation, specific numbers, materials, andconfigurations are set forth in order to provide a thoroughunderstanding of the invention. Nevertheless, the invention may bepracticed without specific details. Furthermore, it is understood thatthe various embodiments shown in the figures are illustrativerepresentations and are not necessarily drawn to scale.

Various operations will be described as multiple discrete operations inturn. However, the order of description should not be construed as toimply that these operations are necessarily order dependent. Inparticular, these operations need not be performed in the order ofpresentation.

Inductor performance may be enhanced by increasing the inductance (L)and Q factor of the inductor, and by reducing the resistance (R) of theinductor. Generally, inductor performance, and particularly L and Q, maybe enhanced by providing a magnetic core in the inductor. Further,integrated inductors having small form factors may be used in manypackaging applications. In particular, providing a 3-dimensionalgenerally spiral shaped inductor including a magnetic core may enhancethe performance of current integrated inductors. Also, a 3-dimensionalgenerally spiral shaped inductor including a magnetic core may providesimilar or increased performance over discrete inductors while providingmany advantages due to their small form factors.

FIG. 1 illustrates an inductor 100 having connections 101, segments 103,and elements 102. A magnetic core may run through the middle of inductor100, between segments 103 and elements 102, as is further discussedbelow. In addition, inductor 100 may be on a substrate, as is furtherdiscussed below. However, neither a magnetic core nor a substrate areshown in FIG. 1 for the sake of clarity.

Elements 102 are illustrated as arcs in FIG. 1. However, any suitableshape may be used. As will be further discussed below, elements 102 maybe formed using any available support shape, such as a dome or a column.Therefore, elements 102 may be of any shape that facilitates connectionto the ends of segments 103 and allows a magnetic material to runbetween elements 102 and segments 103. In an embodiment, segments 103may be in the shape of an arc. In another embodiment, segments 103 maybe in the shape of an arch having a squared off bottom and a roundedtop. In another embodiment, segments 103 may be in the shape of an archhaving a rounded bottom and a squared off top. Several other shapes,such as, for example, an arch having an oval bottom and top, may beavailable.

As illustrated in FIG. 1, segments 103 may generally be segments thatare aligned in rows. However, the only restraint on the layout ofsegments 103 is that they may be able to form the generally spiral shapeof inductor 100. Specifically, segments 103 need not be the same length,nor do segments 103 need to be parallel. Further, as is illustrated inFIG. 1, elements 102 may generally connect opposite ends of adjacentsegments 103 to form the spiral shape of inductor 100.

FIG. 1 illustrates connections 101 connecting to ends of elements 102and extending away from inductor 100. However, connections 101 mayconnect to inductor 100 in any way. In an embodiment, connections 100may connect to segments 103. In another embodiment, elements 102 mayconnect to shorter segments (not shown) that are similar to segments103, but only extend to a center line of inductor 100. In otherembodiments, connections 100 may extend away from inductor 100 along aline extending along the center line of inductor 100.

FIG. 1 illustrates inductor 100 having 3 turns; however, any number ofturns may be used. In an embodiment, inductor 100 may have 5 turns. Inanother embodiment, inductor 100 may have 10 turns. In otherembodiments, inductor 100 may have any of 1 to 20 turns.

Inductor 100 illustrated in FIG. 1 may have any dimensions. In someembodiments, the width of inductor 100 may be in the range of about 100to 200 microns. In an embodiment, the width may be in the range of about100 to 160 microns. In another embodiment, the width may be in the rangeof about 140 to 160 microns. In some embodiments, the height of inductor100 may be in the range of about 40 to 100 microns. In an embodiment,the height of inductor 100 may be in the range of about 40 to 80microns. In another embodiment, the height may be in the range of about60 to 80 microns. The length of inductor 100 may vary according to thenumber of turns. In an embodiment, the pitch between turns in inductor100 may be in the range of about 50 to 130 microns. In anotherembodiment, the pitch between turns in inductor 100 may be in the rangeof about 50 to 100 microns. In an embodiment, the pitch between turns ininductor 100 may be in the range of about 80 to 100 microns.

Elements 102 and segments 103 may include any suitable material. In anembodiment, elements 102 and segments 103 may be conductive. In someembodiments, elements 102 and segments 103 may be plated copper. In anembodiment, elements 102 and segments 103 may include aluminum. Inanother embodiment, elements 102 and segments 103 may include gold.

Inductor 100 may have any performance characteristics. The performancecharacteristics of inductor 100 may generally depend on a wide number offactors, such as the number of turns, the materials, sizes and shapes ofelements 102, segments 103, and the magnetic core, and the X-Y-Zdimensions of inductor 100.

FIG. 2 illustrates a top down view of inductor 100 on substrate 104. Amagnetic core may run through the middle of inductor 100, betweensegments 103 and elements 102, however a magnetic core is not shown inFIG. 2 for the sake of clarity. Inductor 100 on substrate 104 may beconsidered an integrated inductor because it is integrated ontosubstrate 104, as is further described below. Connections 101 mayconnect inductor 100 to various other integrated circuits and devices,such as transistors, resistors, capacitors, and the like. For the sakeof clarity, only a portion of substrate 104 may be illustrated.

FIGS. 3 through 28 illustrate various embodiments of methods for formingan integrated inductor including a magnetic core. Here, and throughoutthis description, reference to a figure also includes reference to anyfigure illustrating a corresponding cross-sectional view. For example,reference to FIG. 16 also includes reference to FIGS. 16A and 16B.

FIG. 3 illustrates a top down view and FIG. 3A illustrates across-sectional view taken between points A and A′. FIGS. 3 and 3Aillustrate a pattern 130 and layer 120 on substrate 110. Pattern 130 andlayer 120 may be formed in any available manner. Pattern 130 may be anyconductive material. In some embodiments, pattern 130 may include ametal. In an embodiment, pattern 130 may include copper. In anotherembodiment pattern 130 may include aluminum. In an embodiment, pattern130 may be plated with copper. Pattern 130 may include segments that maybe the bottom portions of an inductor. Pattern 130 may also includeother segments that may be connections for connecting an inductor toother electrical circuitry.

Layer 120 may be any suitable material. In some embodiments, layer 120may include the same material as substrate 110. In other embodiments,layer 120 may include dielectric materials.

Substrate 110 may be any suitable material. In an embodiment, substrate100 may include monocrystalline silicon. In another embodiment,substrate 100 may include silicon on insulator. Substrate 100 may alsoinclude other layers or structures (not shown) that comprise insulative,conductive, or semiconductive materials, such as sources, drains, wells,gate dielectrics, isolation structures, and others.

As illustrated in top down view in FIG. 4 and in cross-section in FIG.4A, a separation layer 140 may be formed over pattern 130 and layer 120.In an embodiment, separation layer 140 may include a photoresist orpolyimide material. In an embodiment, separation layer 140 may be formedby spinning on the photoresist or polyimide, selectively exposing it toradiation, and developing away exposed (or unexposed) regions, as isknown in the art. In some embodiments, the formation of separation layer140 may also include a hard bake or a cure. In an embodiment, separationlayer 140 may include a pattern having portions that cover parts ofsegments of pattern 130 while exposing the ends of segments of pattern130, as is illustrated in FIG. 4. In an embodiment, separation layer 140may cover portions of pattern 130 that provide connections for aninductor.

FIGS. 5-7 and FIGS. 8-10 (including cross-sectional views), mayillustrate separate methods for forming a magnetic core over separationlayer 140. It should be pointed out that FIGS. 7 and 10 may besubstantially the same.

As illustrated in FIGS. 5 and 5A, a magnetic material 150 may be formedover layer 120, pattern 130, and separation layer 140. Magnetic material150 may be formed by known techniques, such as deposition, sputtering,and plating. Magnetic material 150 may include any suitable material. Insome embodiments, magnetic material 150 may include permalloys. In otherembodiments, magnetic material 150 may include NiFe, FeTaN, or NiFeRe.In an embodiment, magnetic material 150 may include CoZrTa.

The thickness of magnetic material 150 illustrated in FIGS. 5 and 5A maybe any desired thickness. In some embodiments, the thickness of magneticmaterial 150 may be chosen based on a desired magnetic permeability ofmagnetic material 150. In an embodiment, the thickness may be in therange of about 0.25 to 10 microns. In another embodiment, the thicknessmay be in the range of about 0.25 to 5 microns. In another embodiment,the thickness may be it the range of about 0.5 to 2 microns.

As illustrated in FIGS. 6 and 6A, a patterned layer 160 may be formedover magnetic material 150 by known techniques such as spin-on,exposure, and develop. Patterned layer 160 may cover portions ofmagnetic material 150 while leaving other portions exposed. In anembodiment, patterned layer 160 may include a resist.

As illustrated in FIGS. 7 and 7A, exposed portions of magnetic material150 and patterned resist layer 160 may be removed. Exposed portion ofmagnetic material 150 may be removed by any available technique, such aswet etch or dry etch. Patterned resist layer 160 may be removed by anyavailable technique, such as ash and wet etch.

In some embodiments, a protective coat (not shown) may be formed overmagnetic core 170. In an embodiment, the protective coat may includepolyimide and be formed by spin on, expose, and develop. In anembodiment, the protective coat may be formed over magnetic core 170 andportions of separation layer 140.

With reference to FIG. 4, FIGS. 8-10 may illustrate another method forforming magnetic core 170.

As illustrated in FIGS. 8 and 8A, a pattern layer 180 may be formed overlayer 120, pattern 130, and separation layer 140. In an embodiment,pattern layer 180 may include a pattern including openings that expose aportion of separation layer 140. In an embodiment, pattern layer 180 maybe formed by known techniques such as spin-on, exposure, and develop. Insome embodiments, pattern layer 180 may include a resist.

As illustrated in FIGS. 9 and 9A, a magnetic material 190 may be formed.Magnetic material 190 may be formed by any available technique. In anembodiment, magnetic material 190 may be selectively formed in theopenings of pattern layer 180. In other embodiments, magnetic material190, may be formed in the openings of pattern layer 180 and overportions of pattern layer 180 (not shown). In some embodiments, magneticmaterial may be formed by methods including plating, electrolessplating, and sputter. Magnetic material 190 may include any suitablematerial. In some embodiments, magnetic material 190 may includepermalloys. In other embodiments, magnetic material 190 may includeNiFe, FeTaN, or NiFeRe. In an embodiment, magnetic material 190 mayinclude CoZrTa.

The thickness of magnetic material 190 illustrated in FIGS. 9 and 9A maybe any desired thickness. In some embodiments, the thickness of magneticmaterial 190 may be chosen based on a desired magnetic permeability ofmagnetic core 170. In an embodiment, the thickness may be in the rangeof about 0.25 to 10 microns. In another embodiment, the thickness may bein the range of about 0.25 to 5 microns. In another embodiment, thethickness may be it the range of about 0.5 to 2 microns.

As illustrated in FIGS. 10 and 10A, pattern layer 180 may be removed.Pattern layer 180 may be removed by any suitable technique. In anembodiment, removal of pattern layer 180 may provide for removal ofportions of magnetic material 190 by a lift off technique. That is, anymagnetic material 190 that was situated over pattern layer 180 may beremoved during the removal of pattern layer 180.

In some embodiments, a protective coat (not shown) may be formed overmagnetic core 170. In an embodiment, the protective coat may includepolyimide and be formed by spin on, expose, and develop. In anembodiment, the protective coat may be formed over magnetic core 170 andportions of separation layer 140.

As previously mentioned, FIGS. 7 and 10 are substantially the same. Withreference, then, to either FIG. 7 or FIG. 10, FIGS. 11-17 illustrate amethod for forming high performance integrated inductors.

As illustrated in FIGS. 11 and 11A, a column 200 may be formed over aportion of separation layer 140 and magnetic core 170. Column 200 may beformed by any suitable technique. In some embodiments, column 200 may beformed by spin on, expose, and develop. In an embodiment, column 200 mayinclude a resist. In another embodiment, column 200 may include apolymer. In some embodiments, column 200 may have a width wider thanmagnetic core 170. In an embodiment, column 200 may have an aspect ratioof about 1:1.

As illustrated in FIGS. 12 and 12A, a dome 210 may be formed from column200. In an embodiment, dome 210 may be formed by reflowing column 200with solvents. In another embodiment, dome 210 may be formed by bakingcolumn 200. In an embodiment, dome 210 may be formed by baking column200 at a temperature in the range of about 100 to 120° C. for a time inthe range of about 15 to 45 minutes. In another embodiment, dome 210 maybe formed by multiple baking steps. In an embodiment, a first bake at atemperature in the range of about 100 to 120° C. for a time in the rangeof about 15 to 45 minutes and a second bake at a temperature in therange of about 100 to 150° C. for a time in the range of about 15 to 45minutes may be used to form dome 210.

As illustrated in FIGS. 13 and 13A, a layer 220 may be formed overpattern 130, separation layer 140, and dome 210. Layer 220 may be formedby any available technique and may be any suitable material. In anembodiment, layer 220 may provide a seed layer for subsequent metalformation, as is discussed below. In some embodiments, layer 220 mayinclude a metal. In an embodiment, layer 220 may be formed bysputtering. In an embodiment, layer 220 may include copper. In anotherembodiment, layer 220 may have a thickness in the range of about 500 to2,000 Å. In some embodiments, layer 220 may not be required.

As illustrated in FIGS. 14, 14A, and 14B, a pattern 230 may be formedover layer 220. FIG. 14B illustrates a cross sectional view takenbetween points B and B′. Pattern 230 may include openings that defineelements 102 of inductor 100 illustrated in FIGS. 1 and 2. Pattern 230may include any suitable material. In an embodiment, pattern 230 mayinclude a thick photosensitive material. In another embodiment, pattern230 may include a positive resist.

As illustrated in FIGS. 15, 15A, and 15B, a conductor 240 may be formedin the openings of pattern 230. Conductor 240 may form part of elements102 of inductor 100 illustrated in FIGS. 1 and 2. Conductor 240 may beformed by any suitable technique. In an embodiment, conductor 240 may beformed by a conformal plating technique. In some embodiments, formingconductor 240 may include electroplating, electroless plating, chemicalvapor deposition (CVD), or physical vapor deposition (PVD). Conductor240 may be any suitable material. In some embodiments, conductor 240 mayinclude a metal. In an embodiment, conductor 240 may include copper. Inan embodiment, conductor 240 may include aluminum. In anotherembodiment, conductor 240 may include gold. Any thickness of conductor240 may be used. The thickness of conductor 240 may be chosen based onan electrical DC resistance of inductor 100. In some embodiments, thethickness may be chosen such that inductor 100 has a resistance in therange of about 0.02 to 0.2 Ohms.

As illustrated in FIG. 15, conductor 240 may be in the shape of an arc.However, other shapes may be available. In an embodiment, column 200 maybe used as a support for conductor 240. Therefore, dome 210, column 200,or other shapes may be used to support conductor 240 and they may bereferred to generally as a support.

As illustrated in FIG. 15B, in some embodiments, the thickness ofconductor 240 may be substantially larger than the thickness of layer220. In an embodiment, the thickness of conductor 240 may be in therange of about 20 to 50 microns. In another embodiment, the thickness ofconductor 240 may be in the range of about 25 to 35 microns.

As illustrated in FIGS. 16, 16A, and 16B, pattern 230 may be removed byany available technique. Also, as illustrated in FIGS. 16, 16A, and 16B,portions of layer 220 may be removed. In an embodiment, portions oflayer 220 may be removed by a blanket etch. In some embodiments, part ofconductor 240 may be removed during a blanket etch that removes entireportions of layer 220.

As illustrated in FIGS. 17, 17A, and 17B, dome 210 may be removed by anysuitable technique. In some embodiments, dome 210 may be removed by astripping technique.

With reference to FIGS. 4 and 4A, a method in accordance with anotherembodiment is illustrated in FIGS. 18-28. FIGS. 18 and 4 may besubstantially the same.

As illustrated in FIGS. 19 and 19A, a dome 250 may be formed on portionsof separation layer 140. Dome 250 may be formed by any availabletechnique. In an embodiment, a column may be formed and the column maybe reflowed or baked into a dome. In some embodiments, the column may beformed by spin on, expose and develop. In an embodiment, the column mayinclude a resist. In another embodiment, the column may include apolymer. In an embodiment, the column may have an aspect ratio that isabout 1:1.

In an embodiment, dome 250 may be formed by reflowing the column withsolvents. In an embodiment, dome 250 may be formed by baking the column.In another embodiment, dome 250 may be formed by baking the column at atemperature in the range of about 100 to 120° C. for a time in the rangeof about 15 to 45 minutes. In another embodiment, dome 250 may be formedby multiple baking steps. In an embodiment, a first bake at atemperature in the range of about 100 to 120° C. for a time in the rangeof about 15 to 45 minutes and a second bake at a temperature in therange of about 100 to 150° C. for a time in the range of about 15 to 45minutes may be used to form dome 250.

As illustrated in FIGS. 20 and 20A, a layer 260 may be formed overpattern 130, separation layer 140, and dome 250. Layer 260 may be formedby any available technique and may be any suitable material. In anembodiment, layer 260 may provide a seed layer for subsequent metalformation, as is further discussed below. In an embodiment, layer 260may be formed by sputtering. In some embodiments, layer 260 may includea metal. In an embodiment, layer 260 may include copper. In anembodiment, layer 260 may have a thickness in the range of about 500 to2,000 Å. In some embodiments, layer 260 may not be required.

As illustrated in FIGS. 21, 21A, and 21B, a pattern 265 may be formedover layer 260. Pattern 265 may include openings that define portions ofelements 102 of inductor 100 illustrated in FIGS. 1 and 2. Pattern 265may include any suitable material. In an embodiment, pattern 265 mayinclude a thick photosensitive material. In another embodiment, pattern265 may include a positive resist. Pattern 265 may be formed by anyavailable technique. In an embodiment, pattern 265 may be formed by spinon, expose, and develop.

As illustrated in FIGS. 22, 22A, and 22B, a conductor 270 may be formedin the openings of pattern 265. Conductor 270 may be formed by anyavailable means. In an embodiment, conductor 270 may be formed by aconformal plating technique. In some embodiments, forming conductor 270may include electroplating, electroless plating, chemical vapordeposition (CVD), or physical vapor deposition (PVD). Conductor 270 maybe any suitable material. In an embodiment, conductor 270 may include ametal. In another embodiment, conductor 270 may include copper. In anembodiment, conductor 270 may include aluminum. In another embodiment,conductor 270 may include gold. As shown in FIG. 22B, conductor 270 maybe formed in an opening that define portions of elements 102, whilecovering portions along the centerline of inductor 100.

As illustrated in FIGS. 23, 23A, and 23B, pattern 265 may be stripped byany available means and a pattern 280 may be formed over layer 260 andconductor 270. Pattern 280 may include openings that define locationsfor a magnetic core, as is further discussed below. Pattern 280 mayinclude any suitable material. In an embodiment, pattern 280 may includea resist. Pattern 280 may be formed by any available technique. In anembodiment, pattern 280 may be formed by spin on, expose, and develop.

As illustrated in FIGS. 24, 24A, and 24B, portions of layer 260 and dome250 may removed. Portions of layer 260 may be removed by any availabletechnique such as wet etch or dry etch. Portions of dome 250 may also beremoved by any available technique such as wet etch or dry etch. In anembodiment, different techniques may be used for the removal of portionsof layer 260 and dome 250. Removal of portions of layer 260 and dome 250may expose portions of separation layer 140.

As illustrated in FIGS. 25, 25A, and 25B, a magnetic core 170 may beformed on separation layer 140. Magnetic core 170 may be formed by knowntechniques, such as deposition, sputtering, and plating. Magnetic core170 may include any suitable material. In some embodiments, magneticcore 170 may include permalloys. In other embodiments, magnetic core 170may include NiFe, FeTaN, or NiFeRe. In an embodiment, magnetic core 170may include CoZrTa.

The thickness of magnetic core 170 illustrated in FIGS. 25, 25A, and 25Bmay be any desired thickness. In some embodiments, the thickness ofmagnetic core 170 may be chosen based on a desired magnetic permeabilityof magnetic core 170. In an embodiment, the thickness may be in therange of about 0.25 to 10 microns. In another embodiment, the thicknessmay be in the range of about 0.25 to 5 microns. In another embodiment,the thickness may be it the range of about 0.5 to 2 microns.

As illustrated in FIGS. 26, 26A, and 26B, pattern 280 and dome 250 maybe removed and dome 290 may be formed. Pattern 280 may be removed by anyavailable technique, such as wet etch, dry etch or stripping. Dome 250may also be removed by any available technique, such as wet etch, dryetch or stripping. In some embodiments, a protective coat (not shown)may be formed over magnetic core 170. In an embodiment, the protectivecoat may include polyimide and may be formed by spin on, expose, anddevelop.

Dome 290 may be formed by any available technique. In an embodiment, acolumn may be formed and the column may be reflowed or baked into adome. In some embodiments, the column may be formed by spin on, exposeand develop. In an embodiment, the column may include a resist. Inanother embodiment, the column may include a polymer. In an embodiment,the column may have an aspect ratio that is about 1:1. In an embodiment,dome 290 may be formed by reflowing the column with solvents. In anembodiment, dome 290 may be formed by baking the column. In anotherembodiment, dome 290 may be formed by baking the column at a temperaturein the range of about 100 to 120° C. for a time in the range of about 15to 45 minutes. In another embodiment, dome 290 may be formed by multiplebaking steps. In an embodiment, a first bake at a temperature in therange of about 100 to 120° C. for a time in the range of about 15 to 45minutes and a second bake at a temperature in the range of about 100 to150° C. for a time in the range of about 15 to 45 minutes may be used toform dome 290.

As illustrated in FIGS. 27, 27A, and 27B, a layer 300, a pattern 310,and a conductor 320 may be formed. Layer 300 may be formed over layer260, conductor 270, and dome 290. Layer 300 may be formed by anyavailable technique and may be any suitable material. In an embodiment,layer 300 may provide a seed layer for subsequent metal formation, as isfurther discussed below. In an embodiment, layer 300 may be formed bysputtering. In some embodiments, layer 300 may include a metal. In anembodiment, layer 300 may include copper. In another embodiment, layer300 may have a thickness in the range of about 500 to 2,000 Å. In someembodiments, layer 300 may not be required.

Pattern 310 may be formed over layer 300. Pattern 310 may includeopenings that define portions of elements 102 of inductor 100illustrated in FIGS. 1 and 2. Pattern 310 may include any suitablematerial. In an embodiment, pattern 310 may include a thickphotosensitive material. In another embodiment, pattern 310 may includea positive resist. Pattern 310 may be formed by any available technique.In an embodiment, pattern 310 may be formed by spin on, expose, anddevelop.

Conductor 320 may be formed in the openings of pattern 310. Conductor320 may be formed by any available means. In an embodiment, conductor320 may be formed by a conformal plating technique. In some embodiments,forming conductor 320 may include electroplating, electroless plating,chemical vapor deposition (CVD), or physical vapor deposition (PVD).Conductor 320 may be any suitable material. In an embodiment, conductor320 may include a metal. In another embodiment, conductor 320 mayinclude copper. In an embodiment, conductor 320 may include aluminum. Inanother embodiment, conductor 320 may include gold. As shown in FIG.27B, conductor 320 may be formed in an opening that define portions ofelements 102, forming the remainder of elements 102. Any thickness ofconductor 320 may be used. The thickness of conductor 320 may be chosenbased on an electrical DC resistance of inductor 100. In someembodiments, the thickness may be chosen such that inductor 100 has aresistance in the range of about 0.02 to 0.2 Ohms.

As illustrated in FIGS. 28, 28A, and 28B, pattern 310 may be removed,portions of layers 260, 300 may be removed, and dome 290 may be removed.Pattern 310 may be removed by any available technique such as an etchprocess. Portions of layers 260, 300 may also be removed by anyavailable technique. In an embodiment, portions of layers 260, 300 maybe removed by a blanket etch. In some embodiments, part of conductor 320may be removed during a blanket etch that removes entire portions oflayers 260, 300.

Dome 290 may be removed by any suitable technique. In some embodiments,dome 290 may be removed by a stripping technique.

In some embodiments, inductor 100 may be integrated with a semiconductordevice. In an embodiment the semiconductor device may be amicroprocessor. In other embodiments, the semiconductor device may be amemory controller hub, input/output (I/O) controller hub, graphicsprocessor, display processor, network processor, or network interfacecomponent. In yet other embodiments, the semiconductor device may be avolatile memory component such as a dynamic random access memory or astatic random access memory.

As illustrated in FIG. 29, inductor 100 may be incorporated into asystem 2900. System 2900 may include a processor 2910, a memory 2920, amemory 2930, a graphics processor 2940, a display processor 2950, anetwork interface 2960, an I/O interface 2970, and a communication bus2980. Any of the components in system 2900 may include inductor 100. Inan embodiment, processor 2910 may include inductor 100. In anotherembodiment, graphics processor 2940 may include inductor 100. A largenumber of combinations of components including inductor 100 may beavailable.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, material, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the invention. Thus, the appearances ofthe phrases “in one embodiment” or “in an embodiment” in various placesthroughout this specification are not necessarily referring to the sameembodiment of the invention. Furthermore, the particular features,structures, materials, or characteristics may be combined in anysuitable manner in one or more embodiments.

It is to be understood that the above description is intended to beillustrative, and not restrictive. Many other embodiments will beapparent to those of ordinary skill in the art upon reviewing the abovedescription. The scope of the invention should, therefore, be determinedwith reference to the appended claims, along with the full scope ofequivalents to which such claims are entitled.

1. A method of forming an integrated inductor comprising: forming apattern over a conductive pattern on a substrate; forming a magneticcore over the pattern; forming a support over the magnetic core; forminga second pattern including openings over the support; depositing aconductor in the openings; and removing the second pattern and thesupport.
 2. The method of claim 1, wherein forming the magnetic coreincludes depositing magnetic material, patterning a resist layer overthe magnetic material, etching exposed magnetic material, and removingthe resist layer.
 3. The method of claim 1, wherein forming the magneticcore includes patterning a resist layer, depositing magnetic materialover the resist layer, and removing the resist layer.
 4. The method ofclaim 1, further comprising: forming a protective coating over themagnetic core.
 5. The method of claim 1, wherein forming the supportincludes forming a column over the magnetic core and baking the columnto form a dome.
 6. The method of claim 1, wherein forming the supportincludes forming a column over the magnetic core and reflowing thecolumn into a dome.
 7. The method of claim 6, wherein the column has anaspect ratio of approximately 1:1.
 8. The method of claim 1, wherein thesupport has a width greater than a width of the magnetic core.
 9. Themethod of claim 1, wherein forming the second pattern includespatterning a photosensitive material.
 10. The method of claim 1, furthercomprising: forming a seed layer over the dome and a portion of themetal pattern.
 11. The method of claim 10, wherein the seed layercomprises copper.
 12. The method of claim 10, wherein depositing themetal includes electroplating.
 13. The method of claim 10, furthercomprising: removing a portion of the seed layer.
 14. The method ofclaim 1, wherein the conductor comprises at least one of copper,aluminum, or gold.
 15. The method of claim 1, further comprising:forming a second dome over the pattern; forming a seed layer over thesecond dome; forming a third pattern including openings over the barrierlayer; depositing a second metal into the openings of the third pattern;removing the third pattern; forming a fourth pattern including openingsover the barrier layer; etching portions of the seed layer and thesecond dome to expose the pattern; and removing the second dome.
 16. Amethod of forming an integrated inductor comprising: forming a patternover a metal pattern on a substrate; forming a magnetic core over thepattern; forming a dome over the magnetic core; depositing a seed layerover the dome and a portion of the metal pattern; forming a secondpattern including openings over the dome; depositing a metal on the seedlayer in the openings; and removing the second pattern, a portion of theseed layer, and the dome to form an inductor.
 17. The method of claim16, wherein forming the dome includes patterning resist to form a columnover the magnetic core and reflowing the column.
 18. The method of claim16, wherein forming the dome includes patterning resist to form a columnover the magnetic core and baking the column.
 19. The method of claim16, wherein forming the magnetic core includes depositing magneticmaterial, patterning a resist layer over the magnetic material, etchingexposed magnetic material, and removing the resist layer.
 20. The methodof claim 16, wherein forming the magnetic core includes patterning aresist layer, depositing magnetic material over the resist layer, andremoving the resist layer.
 21. The method of claim 16, furthercomprising: forming a second dome over the pattern; forming a secondseed layer over the second dome; forming a third pattern includingopenings over the barrier layer; depositing a second metal into theopenings of the third pattern; removing the third pattern; forming afourth pattern including openings over the barrier layer; etching thebarrier layer and the second dome to expose the pattern; and removingthe fourth pattern and the second dome.
 22. An apparatus comprising: aplurality of conductive segments situated substantially in a row on asubstrate; a conductive element connecting an end of a first conductivesegment to an opposite end of a second conductive segment; and amagnetic material between the element and the first conductive segment.23. The apparatus of claim 22, wherein the first conductive segmentcomprises a metal.
 24. The apparatus of claim 22, wherein the conductiveelement is substantially in the shape of an arch.
 25. The apparatus ofclaim 22, wherein the conductive element is substantially in the shapeof an arch having a squared off bottom portion and a rounded topportion.
 26. The apparatus of claim 22, wherein the conductive elementcomprises at least one of copper, aluminum, or gold.
 27. The apparatusof claim 22, wherein the conductive element comprises a seed layer. 28.The apparatus of claim 22, wherein the magnetic material comprises atleast one of CoZrTa, a permalloy, NiFe, FeTaN, or NiFeRe.
 29. Theapparatus of claim 22, further comprising: a separation layer betweenthe magnetic material and the first conductive segment.
 30. Theapparatus of claim 22, further comprising: a protective coating betweenthe magnetic material and the element.
 31. The apparatus of claim 22,further comprising: a plurality of conductive elements connecting endsof the conductive segments to opposite ends of adjacent conductivesegments.
 32. The apparatus of claim 22, wherein the number ofconductive segments is in the range of about 2 to
 10. 33. The apparatusof claim 22, wherein the number of conductive segments is in the rangeof about 2 to
 5. 34. The apparatus of claim 22, wherein the apparatushas a width in the range of about 100 to 200 microns and a height in therange of about 40 to 80 microns.
 35. A system comprising: amicroprocessor including an inductor having a plurality of conductivesegments situated substantially in a row, a conductive elementconnecting an end of a first conductive segment to an opposite end of asecond conductive segment, and a magnetic material between the elementand the first conductive segment integrated on a surface thereof; and adisplay processor.
 36. The system of claim 35, further comprising: avolatile memory component.